| PART |
Description |
Maker |
| SSTV16859DGG SSTV16859BS SSTV16859EC |
2.5 V 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM
|
NXP Semiconductors
|
| IDT72T2098L7BBI IDT72T20108 IDT72T20108L10BB IDT72 |
2.5 VOLT HIGH-SPEED TeraSync⑩ DDR/SDR FIFO 20-BIT/10-BIT CONFIGURATION
|
IDT[Integrated Device Technology]
|
| K4H560838F-TC/LA2 K4H560838F-TC/LB3 K4H561638F-TC/ |
256Mb F-die DDR SDRAM Specification 256Mb的的F - DDR SDRAM内存芯片规格
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, Single Ch. 8-PDIP
10-Bit, 38 kSPS ADC Serial Out, On-Chip System Clock, 11 Ch. 20-PLCC -40 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| ADC1610S065HN ADC1610S080HN ADC1610S105HN ADC1610S |
Single 16-bit ADC; 65 Msps, 80 Msps, 105 Msps or 125 Msps; CMOS or LVDS DDR digital outputs
1-CH 16-BIT PROPRIETARY METHOD ADC, SERIAL ACCESS, PQCC40
|
NXP Semiconductors
|
| A48P3616 |
8M X 16 Bit DDR DRAM
|
AMICC[AMIC Technology]
|
| A48P4616 |
16M X 16 Bit DDR DRAM
|
AMICC[AMIC Technology]
|
| CBTV4020 CBTV4020EE CBTV4020EG |
20-bit DDR SDRAM 2 : 1 MUX
|
NXP Semiconductors
|
| A48P4616B |
16M X 16 Bit DDR DRAM
|
AMIC Technology
|
| W97AH6KB |
Four-bit prefetch DDR architecture
|
Winbond
|
| M14D5121632A M14D5121632A-2.5BG M14D5121632A-3BG |
8M x 16 Bit x 4 Banks DDR II SDRAM
|
Elite Semiconductor Memory Technology Inc.
|
